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IEICE Trans

Keyword : gate oxide thickness

Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness
Ching-Lin FAN Yi-Yan LIN Yan-Hang YANG Hung-Che CHEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/01/01
Vol. E93-C  No. 1 ; pp. 151-153
Type of Manuscript:  LETTER
Category: Electronic Displays
Keyword: 
polycrystalline silicon (poly-Si) thin film transistors (TFTs), rapid thermal annealing (RTA), gate oxide thickness, 
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