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IEICE Trans

Keyword : gate length

A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission
Toshihiro MATSUDA Hiroaki TAKEUCHI Akira MURAMATSU Hideyuki IWATA Takashi OHZONE Kyoji YAMASHITA Norio KOIKE Ken-ichiro TATSUUMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5 ; pp. 811-816
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
MOSFET, photoemission, hot carrier, gate length, 
 Summary | Full Text:PDF