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IEICE Trans

Keyword : gate current

Boron Penetration and Hot-Carrier Effects in Surface-Channel PMOSFETs with p+ Poly-Si Gates
Tohru MOGAMI Lars E. G. JOHANSSON Isami SAKAI Masao FUKUMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3 ; pp. 255-260
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
hot-carrier effects, boron penetration, surface-channel PMOSFETs, gate current, BF2, 
 Summary | Full Text:PDF