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IEICE Trans

Keyword : gate bias stress

Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
Jin-Ping AO Yuya YAMAOKA Masaya OKADA Cheng-Yu HU Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1004-1008
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
AlGaN/GaN, heterojunction field-effect transistor, current collapse, gate bias stress, 
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