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IEICE Trans

Keyword : frequency-dispersion

Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si3N4
Sanghyun SEO Eunjung CHO Giorgi AROSHVILI Chong JIN Dimitris PAVLIDIS Laurence CONSIDINE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1245-1250
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
AlN, AlN/GaN MISFET, AlN/GaN HFET, wide-bandgap, frequency-dispersion, 
 Summary | Full Text:PDF