Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C
No. 7 ;
pp. 1025-1030
Type of Manuscript:
Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices Keyword: enhancement mode, AlGaN/GaN, HEMT, fluoride, plasma treatment, threshold voltage, |