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IEICE Trans

Keyword : floating-gate memory

Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer
Eun-Ki HONG Kyung Eun PARK Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2022/10/01
Vol. E105-C  No. 10 ; pp. 589-595
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
N-doped LaB6, LaBxNy insulator, pentacene, amorphous rubrene, floating-gate memory, organic semiconductor, 
 Summary | Full Text:PDF