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| Keyword : ferroelectrics
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A 2-Mb 1T1C FeRAM Prototype Based on PMOS-Gating Cell Structure
Yeonbae CHUNG Jung-Hyun KIM Jae-Eun YOON | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2004/10/01
Vol. E87-C
No. 10 ;
pp. 1686-1693
Type of Manuscript:
Special Section PAPER (Special Section on New Era of Nonvolatile Memories)
Category: Ferroelectric Memory
Keyword:
FeRAM, memory, nonvolatile, ferroelectrics, | | | Summary | Full Text:PDF | |
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Limitations on ULSI-FeRAMs
James F. SCOTT | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C
No. 4 ;
pp. 477-487
Type of Manuscript:
INVITED PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category:
Keyword:
ferroelectrics, non-volatile, memories, RAM, | | | Summary | Full Text:PDF | |
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