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IEICE Trans

Keyword : extended defects

Atomic Scale Simulation of Extended Defects: Monte Carlo Approach
Jaehee LEE Taeyoung WON 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8 ; pp. 1253-1258
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Process Modeling and Simulation
Keyword: 
extended defects, arsenic precipitation, Monte Carlo simulation, bimolecular kinetics, 
 Summary | Full Text:PDF