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| Keyword : evaporation
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One Transistor Type OFET/ReRAM Integrated Device Utilizing High-k LaBxNy/Nitrogen-Doped LaB6 Gate Electrode Stacked Structure Shun-ichiro OHMI Jiaang ZHAO | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2025/09/01
Vol. E108-C
No. 9 ;
pp. 413-417
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Keyword: OFET, ReRAM, nitrogen-doped LaB6, LaBxNy insulator, RF sputtering, evaporation, | | | Summary | Full Text:PDF | |
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