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IEICE Trans

Keyword : epitaxy

Novel High-Throughput Plasma Enhanced Growth of SiGe in a 200 mm/300 mm Single Wafer Cluster Tool
Juergen RAMM Hans von KANEL 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 1935-1942
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
epitaxy, virtual substrate, strained silicon, low temperature, pre-epi clean, plasma, 
 Summary | Full Text:PDF
Hetero-Epitaxial PbZr0. 48Ti0. 52O3 Capacitors with Oxide Electrodes
Mitsuo SUGA Masahiko HIRATANI Choichiro OKAZAKI Masanari KOGUCHI Hiroshi KAKIBAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4 ; pp. 523-527
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
epitaxy, TEM, PZT, SrRuO3, SrTiO3, 
 Summary | Full Text:PDF
A 40GHz fT SATURN Transistor Using 2-Step Epitaxial Base Technology
Hirokazu FUJIMAKI Koji YAMONO Kenichi SUZUKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4 ; pp. 549-553
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
bipolar LSI, epitaxy, self alignment, cut-off frequency, optical communication, 
 Summary | Full Text:PDF