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IEICE Trans

Keyword : drain-current transient

Computer-Aided Analysis of GaAs MESFETs with p-Buffer Layer on the Semi-Insulating Substrate
Kazushige HORIO Naohisa OKUMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10 ; pp. 1140-1145
Type of Manuscript:  Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
GaAs MESFET, p-buffer layer, deep level, small-signal parameters, drain-current transient, 
 Summary | Full Text:PDF