Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C
No. 3 ;
pp. 350-356
Type of Manuscript:
Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category:
Keyword:
Monte Carlo simulation, strained SiGe, low field electron mobility, doping and strain effects, |