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IEICE Trans

Keyword : diffusion-constant

Molecular Dynamics Calculation Studies of Interstitial-Si Diffusion and Arsenic Ion Implantation Damage
Masami HANE Takeo IKEZAWA Akio FURUKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8 ; pp. 1247-1252
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Process Modeling and Simulation
Keyword: 
interstitial-silicon, interstitial diffusivity, diffusion-constant, molecular dynamics, ion-implantation damage, 
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