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IEICE Trans

Keyword : device phenomena

100 nm-MOSFET Model for Circuit Simulation: Challenges and Solutions
Mitiko MIURA-MATTAUSCH Hiroaki UENO Hans Juergen MATTAUSCH Keiichi MORIKAWA Satoshi ITOH Akiyoshi KOBAYASHI Hiroo MASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/06/01
Vol. E86-C  No. 6 ; pp. 1009-1021
Type of Manuscript:  INVITED PAPER (Special Issue on Devices and Circuits for Next Generation Multi-Media Communication Systems)
Category: 
Keyword: 
MOSFET model, surface potential, device phenomena, RF applications, 
 Summary | Full Text:PDF