Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/02/25 Vol. E77-CNo. 2 ;
pp. 161-165 Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93)) Category: Device Simulation Keyword: degradation of drain current, velocity-saturation, Idso, lateral electric field,