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IEICE Trans

Keyword : deep impurity level

Some Considerations of Transient Negative Photoconductivity in Silicon Doped with Gold
Hideki KIMURA Norihisa MATSUMOTO Koji KANEKO Yukio AKIBA Tateki KUROSU Masamori IIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9 ; pp. 1036-1042
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
negative photoconductivity, deep impurity level, highly resistive silicon, functional device, 
 Summary | Full Text:PDF