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IEICE Trans

Keyword : conductance method

Hetero-Interface Properties of SiO2/4H-SiC on Various Crystal Orientations
Hiroyuki MATSUNAMI Tsunenobu KIMOTO Hiroshi YANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 1943-1948
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
silicon carbide, SiO2/4H-SiC interface, C-V characteristics, conductance method, channel mobility, 
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