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IEICE Trans

Keyword : charge trap memory

An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory
Akira OTAKE Keita YAMAGUCHI Katsumasa KAMIYA Yasuteru SHIGETA Kenji SHIRAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 693-698
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
non-volatile memory, MONOS, SiN, first principles calculation, charge trap memory, 
 Summary | Full Text:PDF