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IEICE Trans

Keyword : charge trap

Digital/Analog-Operation of Hf-Based FeNOS Nonvolatile Memory Utilizing Ferroelectric Nondoped HfO2 Blocking Layer
Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2024/09/01
Vol. E107-C  No. 9 ; pp. 232-236
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
ferroelectric nondoped HfO2, metal/oxide/nitride/oxide/Si, nonvolatile memory, partial polarization, charge trap, 
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