Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C
No. 8 ;
pp. 1253-1258
Type of Manuscript:
Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Process Modeling and Simulation Keyword: extended defects, arsenic precipitation, Monte Carlo simulation, bimolecular kinetics, |