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IEICE Trans

Keyword : ballistic electron

Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer
Yasuyuki MIYAMOTO Ryo NAKAGAWA Issei KASHIMA Masashi ISHIDA Nobuya MACHIDA Kazuhito FURUYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 972-978
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: THz Devices
Keyword: 
hot electron transistor, InP, ballistic electron, electron beam lithography, 
 Summary | Full Text:PDF