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IEICE Trans

Keyword : atomic layer epitaxy

Quantitative Analysis of Submonolayer Si on Ge Surface by Isotope Dilution Secondary Ion Mass Spectrscopy
Izumi KAWASHIMA Yasuo TAKAHASHI Tsuneo URISU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9 ; pp. 986-989
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
ID-SIMS, isotope dilution SIMS, self-limiting adsorption, atomic layer epitaxy, Si film, 
 Summary | Full Text:PDF