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IEICE Trans

Keyword : XTEM

A Site Specification Method of Gate Oxide Breakdown Spots by a New Test Structure of MOS Capacitors
Satoshi IKEDA Hidetsugu UCHIDA Norio HIRASHITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1134-1137
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
MOS capacitor, gate oxide, OBIC, breakdown spot, XTEM, 
 Summary | Full Text:PDF