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IEICE Trans

Keyword : Tunnel Field-Effect Transistors

Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using VT-Control Doping Region
Hyungjin KIM Min-Chul SUN Hyun Woo KIM Sang Wan KIM Garam KIM Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 820-825
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Tunnel Field-Effect Transistors, threshold voltage, VT-control doping region, 
 Summary | Full Text:PDF