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IEICE Trans

Keyword : TDGC model

Ultimate Lower Bound of Power for MOS Integrated Circuits and Their Applications
Kunihiro ASADA Mike LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/07/25
Vol. E77-C  No. 7 ; pp. 1131-1137
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
SOI, deep submicron, charging and discharging energy, recycled energy, TDGC model, transient device simulation, finite element method, future MOS LSI, 
 Summary | Full Text:PDF