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IEICE Trans

Keyword : SiGe BiCMOS technology

A 24-30 GHz Transceiver Front-End for 5G Applications with Power Amplifier with > 21-dBm Psat and Low Noise Amplifier with < 4-dB NF Equipped with Phase Inverter
Chihiro KAMIDAKI Tatsuo KUBO Yuma OKUYAMA Shinogu TAKEDA Yo YAMAGUCHI Ning GUAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2025/10/01
Vol. E108-C  No. 10 ; pp. 470-478
Type of Manuscript:  Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
5G, millimeter-wave, transceiver front-end, power amplifier, low noise amp, phase inverter, transmission/reception switch, SiGe BiCMOS technology, 
 Summary | Full Text:PDF