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IEICE Trans

Keyword : Selectively Anodized Aluminum Oxide substrate

A Miniaturized 2.5 GHz 8 W GaN HEMT Power Amplifier Module Using Selectively Anodized Aluminum Oxide Substrate
Hae-Chang JEONG Kyung-Whan YEOM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/10/01
Vol. E95-C  No. 10 ; pp. 1580-1588
Type of Manuscript:  Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
Selectively Anodized Aluminum Oxide substrate, Gallium-nitride (GaN) HEMT, class-F power amplifier, 
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