Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/04/01 Vol. E90-CNo. 4 ;
pp. 749-757 Type of Manuscript: Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies) Category: Memory Keyword: SRAM, 1R/1W-SRAM, disturbed access, SNM, write margin, cell current,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/11/01 Vol. E89-CNo. 11 ;
pp. 1526-1534 Type of Manuscript: Special Section PAPER (Special Section on Novel Device Architectures and System Integration Technologies) Category: Keyword: SRAM, cell terminal biasing, differential cell terminal, SNM, write margin, disturb,