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IEICE Trans

Keyword : SILC

Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films
Tetsuo ENDOH Kazuyuki HIROSE Kenji SHIRAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5 ; pp. 955-961
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Ultra-Thin Gate Insulators
Keyword: 
SILC, stress-induced leakage current, SiO2, ultra thin silicon dioxide, mean-free-path, O vacancy model, 
 Summary | Full Text:PDF