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IEICE Trans

Keyword : S/D engineering

Low Temperature Formation of Pd2Si with TiN Encapsulating Layer and Its Application to Dopant Segregation Process
Rengie Mark D. MAILIG Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2019/06/01
Vol. E102-C  No. 6 ; pp. 447-452
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
palladium silicide, TiN encapsulating layer, dopant segregation process, S/D engineering, Schottky barrier height, 
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