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Vdd Gate Biasing RF CMOS Amplifier Design Technique Based on the Effect of Carrier Velocity Saturation
Noboru ISHIHARA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2007/09/01
Vol. E90-C
No. 9 ;
pp. 1702-1707
Type of Manuscript:
Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: Active Devices/Circuits
Keyword:
RF-CMOS, amplifiers, gate bias circuits, carrier velocity saturation, | | | Summary | Full Text:PDF | |
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