Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO2 Gate Insulator for Analog Memory Application Joong-Won SHINMasakazu TANUMAShun-ichiro OHMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2022/10/01 Vol. E105-CNo. 10 ;
pp. 578-583 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: ferroelectric, 5nm thick nondoped HfO2, RF magnetron sputtering, Pt gate electrode, PMA process,