Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C
No. 7 ;
pp. 1020-1024
Type of Manuscript:
Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaN Process Technology Keyword: Ohmic contact, p-GaN, dry-etching, etching damage, SiCl4, |