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IEICE Trans

Keyword : MOS scaling

TCAD--Yesterday, Today and Tomorrow
Robert W. DUTTON 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 791-799
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
TCAD, device simulation, process simulation, IC technology, diffusion, ion implantation, oxidation, MOS scaling, modeling, hierarchy, atomic-scale phenomena, 
 Summary | Full Text:PDF