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IEICE Trans

Keyword : MOS diodo

Influence of Vacancy in Silicon Wafer of Various Types on Surface Microroughness in Wet Chemical Process
Tadahiro OHMI Toshihito TSUGA Jun TAKANO Masahiko KOGURE Koji MAKIHARA Takayuki IMAOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/07/25
Vol. E75-C  No. 7 ; pp. 800-808
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra Clean Technology)
Category: 
Keyword: 
surface microroughness, vacancy, sillicon wafer, wet chemical process, diffusion, MOS diodo, thin oxide film, 
 Summary | Full Text:PDF