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IEICE Trans

Keyword : MFS diodes

The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100)
Min Gee KIM Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2019/06/01
Vol. E102-C  No. 6 ; pp. 435-440
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
ferroelectric HfO2, undoped HfO2, post-metallization annealing, MFS diodes, 
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