Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C
No. 5 ;
pp. 683-687
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Keyword: metamorphic HEMT, InP-composite channel MHEMT, gate recess, impact ionization effect, |