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IEICE Trans

Keyword : InP HBTs

Highly Reliable Submicron InP-Based HBTs with over 300-GHz ft
Norihide KASHIO Kenji KURISHIMA Yoshino K. FUKAI Shoji YAMAHATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1084-1090
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaAs- and InP-Based Devices
Keyword: 
InP HBTs, passivation ledge, reliability, 
 Summary | Full Text:PDF