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IEICE Trans

Keyword : InGaN cap

Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
Masafumi ITO Shigeru KISHIMOTO Fumihiko NAKAMURA Takashi MIZUTANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 989-993
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
normally-off, AlGaN/GaN, HEMT, InGaN cap, 
 Summary | Full Text:PDF