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| Keyword : HVPE
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One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000 on GaAs (111) Substrates
Fumio HASEGAWA Masato MINAMI Takashi SUEMASU | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C
No. 4 ;
pp. 633-638
Type of Manuscript:
INVITED PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category:
Keyword:
GaN, HVPE, GaAs substrate, thick GaN layer, | | | Summary | Full Text:PDF | |
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