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IEICE Trans

Keyword : Ge epitaxial layer

Reduced Peripheral Leakage Current in Pin Photodetectors of Ge on n+-Si by P+ Implantation to Compensate Surface Holes
Koji ABE Mikiya KUZUTANI Satoki FURUYA Jose A. PIEDRA-LORENZANA Takeshi HIZAWA Yasuhiko ISHIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2024/09/01
Vol. E107-C  No. 9 ; pp. 237-240
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
Ge epitaxial layer, near-infrared photodetector, Si photonics, peripheral leakage current, 
 Summary | Full Text:PDF