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IEICE Trans

Keyword : GaN amplifier

The Dawn of the New RF-HySIC Semiconductor Integrated Circuits: An Initiative for Hybrid ICs Consisting of Si and Compound Semiconductors
Shigeo KAWASAKI Akihira MIYACHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/10/01
Vol. E99-C  No. 10 ; pp. 1085-1093
Type of Manuscript:  INVITED PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
hybrid semiconductor IC, RF-IC, GaN amplifier, rectifier, 
 Summary | Full Text:PDF