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IEICE Trans

Keyword : GaN MOS diodes

Improvement of the Interface Quality of the Al2O3/III-Nitride Interface by (NH4)2S Surface Treatment for AlGaN/GaN MOSHFETs
Eiji MIYAZAKI Shigeru KISHIMOTO Takashi MIZUTANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8 ; pp. 1337-1342
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
GaN MOS diodes, Al2O3/AlGaN/GaN MOSHFETs, (NH4)2S, interface state density, 
 Summary | Full Text:PDF