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IEICE Trans

Keyword : Fin-FETs

Parasitic Effects in Multi-Gate MOSFETs
Yusuke KOBAYASHI C. Raghunathan MANOJ Kazuo TSUTSUI Venkanarayan HARIHARAN Kuniyuki KAKUSHIMA V. Ramgopal RAO Parhat AHMET Hiroshi IWAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/10/01
Vol. E90-C  No. 10 ; pp. 2051-2056
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
multi-gate, Fin-FETs, high-K dielectric, fringe capacitance, parasitic effect, 
 Summary | Full Text:PDF