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IEICE Trans

Keyword : EEPROM

MNOS Nonvolatile Semiconductor Memory Technology: Present and Future
Yoshiaki KAMIGAKI Shin'ichi MINAMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6 ; pp. 713-723
Type of Manuscript:  INVITED PAPER (Special Issue on Nonvolatile Memories)
Category: MNOS Memory
Keyword: 
MNOS (MONOS), EEPROM, nonvolatile semiconductor memory, tunnel oxide, trapping nitride, 
 Summary | Full Text:PDF
Sub-Halfmicron Flash Memory Technologies
Koji SAKUI Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Vol. E77-C  No. 8 ; pp. 1251-1259
Type of Manuscript:  INVITED PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: Non-volatile Memory
Keyword: 
magnetic memory, core memory, EEPROM, flash memory, NAND EEPROM, 
 Summary | Full Text:PDF
A 3 Volt 1 Mbit Full-Featured EEPROM Using a Highly-Reliable MONOS Device Technology
Shin-ichi MINAMI Kazuaki UJIIE Masaaki TERASAWA Kazuhiro KOMORI Kazunori FURUSAWA Yoshiaki KAMIGAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Vol. E77-C  No. 8 ; pp. 1260-1269
Type of Manuscript:  Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: Non-volatile Memory
Keyword: 
low-voltage operation, nonvoltatile semiconductor memory, EEPROM, MONOS device, 
 Summary | Full Text:PDF
C-V and I-V Characteristics of a MOSFET with Si-Implanted Gate-SiO2
Takashi OHZONE Takashi HORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/06/25
Vol. E77-C  No. 6 ; pp. 952-959
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
MOSFET, Si-implantation, EEPROM, 
 Summary | Full Text:PDF