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IEICE Trans

Keyword : EEHEMT

An Improved EEHEMT RF Noise Model for 0.25 µm InGaP pHEMT Transistor Using Verilog-A Language
An-Sam PENG Lin-Kun WU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2017/05/01
Vol. E100-C  No. 5 ; pp. 424-429
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
pHEMT, noise parameters, modeling, EEHEMT, 
 Summary | Full Text:PDF