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IEICE Trans

Keyword : DCEL

N-InAlAs/InGaAs HEMT DCFL Inverter Fabricated Using Pt-Based Gate and Photochemical Dry Etching
Naoki HARADA Shigeru KURODA Kohki HIKOSAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10 ; pp. 1165-1171
Type of Manuscript:  Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
HEMT, InGaAs, Schottky junction, DCEL, dry etching, 
 Summary | Full Text:PDF