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IEICE Trans

Keyword : CMOS transistor

200 V Rating CMOS Transistor Structure with Intrinsic SOI Substrate
Hitoshi YAMAGUCHI Shigeyuki AKITA Hiroaki HIMI Kazunori KAWAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/12/25
Vol. E83-C  No. 12 ; pp. 1961-1967
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high breakdown voltage, CMOS transistor, electric field relaxation, SOI, intrinsic layer, 
 Summary | Full Text:PDF