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IEICE Trans

Keyword : BJT

Operating Characteristics of Gamma Irradiated Si BJT
Sung Ho AHN Gwang Min SUN Hani BAEK Byung-Gun PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2022/10/01
Vol. E105-C  No. 10 ; pp. 631-634
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
gamma irradiation, BJT, ionization, displacement damage, 
 Summary | Full Text:PDF
The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices
Chinchun MENG Jen-Yi SU Bo-Chen TSOU Guo-Wei HUANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/04/01
Vol. E89-C  No. 4 ; pp. 520-523
Type of Manuscript:  Special Section LETTER (Special Section on Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
Category: 
Keyword: 
BJT, selectively implanted collector, 
 Summary | Full Text:PDF
Intermodulation Distortion of Low Noise Silicon BJT and MOSFET Fabricated in BiCMOS Process
Noriharu SUEMATSU Masayoshi ONO Shunji KUBO Mikio UESUGI Kouichi HASEGAWA Kenji HIROSHIGE Yoshitada IYAMA Tadashi TAKAGI Osami ISHIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/05/25
Vol. E82-C  No. 5 ; pp. 692-698
Type of Manuscript:  Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
Category: 
Keyword: 
distortion, low noise, BJT, CMOS, mobile communication, Si-MMIC, 
 Summary | Full Text:PDF